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    • 专利摘要:
    The method for producing a selective doping photovoltaic cell comprises the following steps: providing a doped semiconductor substrate of a first conductivity type; forming in the substrate a first doped region, the first region having a first concentration of doping elements; forming, by ion implantation of doping elements in the substrate, at least one set of alignment patterns, the largest dimension of which is less than one millimeter, and a second region adjacent to the first region, having a second concentration of doping elements greater than the first concentration; subjecting the substrate to a thermal treatment, so as to activate the doping elements and to form an oxide layer on the surface of the substrate, over the alignment units, the first region and the second region, the second concentration and the conditions; heat treatment being chosen so that the oxide layer has a thickness above the alignment patterns at least 10 nm greater than the thickness of the oxide layer outside the alignment patterns; depositing an antireflection layer on the oxide layer; and depositing, through a screen, an electrode on the antireflection layer, facing the second region, the screen being positioned relative to the substrate by means of alignment patterns.
    公开号:FR3018391A1
    申请号:FR1451869
    申请日:2014-03-07
    公开日:2015-09-11
    发明作者:Perchec Jerome Le；Remi Monna
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present invention relates to a method of manufacturing a photovoltaic cell having a surface selective doping, such as a selective emitter cell or a rear contact cell. -digités.
    [0002] STATE OF THE ART A photovoltaic cell is a device made of a semiconductor material, such as silicon, which absorbs the energy of photons and converts it into electrical energy.
    [0003] Schematically, this device comprises a first silicon zone doped with p-type impurities (for example boron atoms), in contact with a second silicon zone doped with n-type impurities (for example phosphorus atoms), thus forming a pn junction. The junction p-n creates an electric field, which dissociates the electron-hole pairs generated by the absorption of the photons, the electrons being directed towards the zone n and the holes towards the zone p. A p-n junction can be achieved simply by forming an n-type doped region within a p-type substrate. Electrical contacts are further formed on the surface of the substrate on either side of the p-n junction, that is to say on the n-doped zone and on the p-doped zone, to collect electrons and holes. These contacts are generally made by screen printing, which is a fast printing technique and simple to implement. In order to improve the quality of the contacts, one technique is to strongly boost the semiconductor region under the contacts. However, a high concentration of dopants increases losses by Auger recombination, especially at the surface, and therefore decreases the efficiency of the photovoltaic cell. For this reason, this strong doping is realized only locally (ie under the contacts). One face of the cell equipped with contacts may thus have a variable dopant concentration. A first example of surface-modulated doped photovoltaic cells is given by the selective emitter cells. FIG. 1A is a schematic top view of a selective emitter photovoltaic cell 10 and FIG. 1B is a sectional view of this cell along the axis A-A of FIG. 1A.
    [0004] The selective emitter cell 10 comprises a p-type doped silicon substrate 12. The substrate 12 comprises a front face 12a, exposed to solar radiation, and a rear face 12b, opposite to the front face 12a (Figure 1B). Thus, the photons enter the cell through the front face 12a of the substrate.
    [0005] In this configuration of photovoltaic cells, the p-n junction is obtained by the formation of an n-type doped silicon layer 14 on the front face 12a of the p-type substrate. The layer 14 is, for example, formed by gas diffusion of phosphorus (eg POCl3 diffusion) or by implantation of ionized phosphorus atoms in the substrate. Overdoped regions 14 ', having a dopant concentration greater than that of layer 14, are furthermore produced in layer 14, for example by ion implantation or by applying a laser beam. The n-doped layer 14 and the overdoped regions 14 ', also n-type, are referred to as the "emitter", as opposed to the p-type substrate which forms a "base" of the p-n junction. In the front face 12a of the substrate, the highly doped areas 14 'are connected to a first electrode 16a, for example in the form of metal lines (FIG. 1A), with which they form a good ohmic contact because of their low resistivity. The weaker doping of the layer 14 makes it possible to reduce electron-hole pair recombinations and to lessen the incident photons of high energy. A second electrode 16b provides the rear face contact 12b of the substrate.
    [0006] Finally, an antireflection layer 18 (not shown in FIG. 1A) in SiN is disposed on the front face 12a of the substrate, to ensure good absorption of the photons in the photovoltaic cell.
    [0007] Thus, the selective emitter cell 10 has on the front face two regions of the same type of conductivity (here n-doping), having different dopant concentrations to obtain distinct electrical and photovoltaic characteristics.
    [0008] Inter-digitized back contact ("IBC") cells provide a second example of photovoltaic cells having a selective doping structure. In this other cell configuration, the p-n junction is formed on the rear face of an n-type substrate (unlit face). This rear face comprises two nested doped zones having opposite doping types: a p area and an n + area for a n type substrate (the n + area having a repulsive field effect favorable to a lower recombination of the surface carriers). Thus, unlike a selective emitter cell, an IBC cell has, on the rear face, two doped zones having opposite types of doping.
    [0009] FIG. 2A is a simplified bottom view (rear face 12b) of an IBC inter-digitated rear contact cell 20 and FIG. 2B is a sectional view of this cell along the axis B-B of FIG. 2A.
    [0010] The IBC cell 20 comprises, on the rear face 12b of the n-type silicon substrate, n + type doped zones 22, that is to say n-type zones that are more heavily doped than the substrate 12 ("base"), and p-type doped zones 24 ("transmitter"). Zones 22 and 24 have a lower resistivity than the substrate and advantageously serve as a support for the electrical contacts. Thus, "n" 26a and "p" electrodes 26b are respectively disposed in contact with the doped zones 22 and 24. The interdigitated comb-shaped electrodes 26a and 26b cover almost the entire rear face of the substrate (FIG. ). Finally, an antireflection layer 18 in SiN is disposed on the front face 12a of the substrate (FIG. 2B).
    [0011] The formation of the zones 22 and 24 requires, for example, two steps of ion implantation, each being carried out through a specific mask to define the pattern of the implanted zone (here a comb).
    [0012] For the formation of photovoltaic cells, doping by ion implantation is often preferred to doping techniques by diffusion or laser, since it makes it possible to obtain better quality emitters. This technique also makes it possible to better control the dopant profiles in the emitters.
    [0013] The article ["High efficiency selective emitter cells using ion implantation", C.E. Dubé et al., Energy Procedia 8, pp. 706-711, 2011] discloses a method of making a selective emitter cell by ion implantation, from a p-type doped crystalline silicon substrate. This method comprises the following steps: a first ion implantation step for doping the front face of the substrate in its entirety; a second step of ion implantation through a mask to define overdoped regions; an oxidation annealing to form a passivation layer; depositing an antireflection coating on the passivation layer; and finally - a screen printing step for forming metallization tracks on the overdoped regions.
    [0014] The overdoped regions in the front face of the substrate are difficult to distinguish optically, which makes it hazardous to deposit the metallization tracks thereon. To remedy this, the author of this article proposes to position the implantation mask and screen screen relative to the substrate, taking as a reference an edge of this substrate. Thus, the metallization tracks and the overdoped regions are aligned. Nevertheless, such an alignment reference lacks precision and the overdoped regions must be sufficiently wide (about 500 μm), so that the tracks of the electrode can be deposited over surely.
    [0015] US2011 / 0139230 discloses another method of manufacturing ion selective selective emitter cells, wherein the screen printing screen is positioned relative to the substrate by means of alignment patterns previously made by laser in the substrate. These fine alignment patterns increase accuracy, but laser training requires additional step and equipment in the process. Such a manufacturing process is therefore difficult to exploit on a large scale and at a lower cost.
    [0016] SUMMARY OF THE INVENTION There is therefore a need to achieve, simply and economically, a photovoltaic cell provided with a precisely aligned electrode on a highly doped semiconductor region.
    [0017] According to the invention, there is a tendency to satisfy this need by providing the following steps: providing a doped semiconductor substrate of a first conductivity type; forming in the substrate a first doped region, the first region having a first concentration of doping elements; forming, by ion implantation of doping elements in the substrate, at least one set of alignment patterns, the largest dimension of which is less than one millimeter, and a second region adjacent to the first region, having a second concentration of doping elements greater than the first concentration; subjecting the substrate to a thermal treatment, so as to activate the doping elements and to form an oxide layer on the surface of the substrate, over the alignment units, the first region and the second region, the second concentration and the conditions; heat treatment being chosen so that the oxide layer has a thickness above the alignment patterns at least 10 nm greater than the thickness of the oxide layer outside the alignment patterns; depositing an antireflection layer on the oxide layer; and depositing, through a screen, an electrode on the antireflection layer, facing the second region, the screen being positioned relative to the substrate by means of the alignment patterns. In a preferred embodiment, the first region is formed by ion implantation of a first dose of dopant elements across an entire face of the substrate. The alignment patterns and the second region may then be formed by ion implantation of a second dose of dopant elements through said face of the superimposed substrate of a mask, whereby the alignment patterns and the second region cumulates the first and second doses. The first and second doses are advantageously between 5 × 10 14 cm -2 and 2.5 × 10 15 cm -2 and are implanted with an implantation energy of between 5 keV and 15 keV. In a first example of implementation, the photovoltaic cell is a photovoltaic cell with selective emitter; said substrate face is a front face of the photovoltaic cell; the first region is doped with a second type of conductivity opposite the first type, so as to form a p-n junction; and the alignment patterns and the second region are doped with the second conductivity type. Preferably, the heat treatment comprises a single dry atmosphere annealing phase comprising oxygen, at a temperature between 800 ° C and 900 ° C for a period of less than 30min, or in a humid atmosphere comprising oxygen at a temperature between 700 ° C and 800 ° C for a period of less than 1 hour. In a second exemplary implementation, the photovoltaic cell is a photovoltaic cell with inter-digitted rear contacts; said substrate face is a rear face of the photovoltaic cell; the first region is doped with the first type of conductivity; and the alignment patterns and the second region are doped with a second type of conductivity opposite to the first type, so as to form a p-n junction. Preferably, the heat treatment comprises a first phase of annealing without oxygen at a temperature of between 950 ° C. and 1100 ° C. for a duration of less than 30 min and a second annealing phase, ie under a dry atmosphere comprising oxygen. at a temperature of between 800 ° C. and 900 ° C. for a period of less than 30 minutes, ie under a humid atmosphere comprising oxygen at a temperature of between 700 ° C. and 800 ° C. for a duration of less than 45 minutes . The process according to the invention may also have one or more of the following characteristics, considered individually or in any technically possible combination: the first concentration and the heat treatment conditions are chosen so that the oxide layer has a thickness above the first region of at least 5 nm; a third region having the same type of conductivity as the first region is formed in the substrate opposite the first region and at the same time as the first region; the electrode is deposited by screen printing and comprises a plurality of metallization tracks distributed over the antireflection layer; the mask comprises a first set of openings corresponding to the second region, a second set of openings corresponding to the alignment patterns and a third set of openings corresponding to additional patterns, the said additional patterns being covered with metal pads during of the serigraphy step and serving as alignment patterns in an additional step of screen printing.
    [0018] BRIEF DESCRIPTION OF THE FIGURES Other characteristics and advantages of the invention will emerge clearly from the description which is given below, by way of indication and in no way limiting, with reference to the appended figures, among which: FIGS. 1A and 1B represent , respectively in plan view and sectional view along AA, a selective emitter cell according to the prior art; - Figures 2A and 2B show, respectively in bottom view and sectional view along B-B, an inter-digitted rear contact cell according to the prior art; FIGS. 3A to 3E show steps of a method of manufacturing a selective doping photovoltaic cell according to the invention; FIG. 4 represents the reflectivity in the visible spectrum of an SiO 2 oxide layer, taken alone or in combination with an SiN antireflection layer, for different thicknesses of the oxide layer; FIG. 5A represents an exemplary implantation mask used in the steps of FIGS. 3A and 3B; FIG. 5B represents another example of implantation mask used in the step of FIG. 3B; FIG. 6 represents a cell with inter-digitted rear contacts obtained thanks to the manufacturing method according to the invention; and FIG. 7 shows an example of implantation patterns and an example of electrode patterns on the rear face of the inter-digitated back contact cell of FIG. 6. For the sake of clarity, identical or similar elements are identified by identical reference signs on all the figures.
    [0019] DETAILED DESCRIPTION OF AT LEAST ONE EMBODIMENT In the following description, "overdoped" is a region of a semiconductor substrate having a dopant concentration greater than the dopant concentration of adjacent regions, any kind of dopant confused. In the case of a cell with a selective emitter, such as that of FIGS. 1A and 1B, it may in particular be a region (ref 14 ') doped with a type of conductivity having a dopant concentration greater than that of the adjacent region (14) doped with the same type of conductivity. It can also be a doped region of a first conductivity type, having a dopant element concentration greater than that of the doped adjacent region of a second opposite conductivity type, as in the case of an inter-contact cell. -digities (Figs.2AB). The first and second opposite types of conductivity, of course, denote n-type doping and p-type doping, or vice versa. The doping n consists in introducing into a semiconductor material doping elements (also called doping impurities) electron donors, such as phosphorus atoms, arsenic or antimony for a silicon substrate, and doping p consists in introducing electron-accepting doping elements, such as boron or gallium atoms (for a silicon substrate). In its final state, a selective doping photovoltaic cell comprises at least one overdoped region on which an electrode is disposed. This region of high doping allows good ohmic contact with the electrode and thus improves the electrical performance of the cell. The electrode preferably comprises a plurality of metal tracks distributed over one or more overdoped regions. The step of forming metal tracks on the semiconductor substrate of a photovoltaic cell is commonly referred to as "metallization". The electrode may be deposited through a screen, whose openings correspond to the different metal tracks, by any suitable deposition technique, in particular by screen printing. In order to facilitate this metallization step, it is intended to form, on the face of the substrate intended to receive the electrode, alignment patterns which will serve as references for positioning the screen screen. Unlike the methods of the prior art, the alignment patterns are here formed by ion implantation, together with the formation of the overdoped region. Thanks to a high contrast of reflectivity, these alignment patterns are easily detectable, for precise positioning of the screen relative to the substrate. FIGS. 3A to 3E show steps F1 to F5 of a process for manufacturing a selective doping photovoltaic cell, which implements these alignment patterns formed by ion implantation. The cell is, in this first example of implementation, a photovoltaic cell with selective emitter. It is obtained from a substrate 12 made of a doped semiconductor material of a first type of conductivity, for example a p-type doped crystalline silicon. In a first step F1 shown in FIG. 3A, a region 14 of the substrate 12 is doped with a second type of conductivity opposite to that of the substrate, that is to say n-type. A p-n junction 30 is thus formed at the interface of the n-doped region 14 (called the emitter) and the remaining portion of the p-doped substrate 12 (called the base). The emitter 14 is here formed in the front face 12a of the substrate, that is to say on the face intended to receive the solar radiation once the photovoltaic cell finalized.
    [0020] As shown in Figure 3A, the region 14 advantageously occupies the entire front face 12a of the substrate. Fully doping the upper face of the substrate 12 has the advantage of simplifying step F1, but also the subsequent steps of the manufacturing process, in particular the delimitation of the overdoped regions (step F2). The doping of the region 14 can be obtained by various techniques, in particular gaseous diffusion or the application of a laser on the surface of the substrate. However, in a preferred embodiment, this doping is performed by implantation of ionized atoms through the front face 12a of the substrate. Ion implantation, for example by ion beam or immersion in a plasma, makes it possible to obtain better electronic quality emitters and to better control the dopant profile, compared to diffusion doping. This also makes it possible to dispense with the step of removing the phosphor glass, usually performed after a POCI3-type phosphor diffusion. The dopants are preferably implanted with implantation energies of between 5 keV and 15 keV, whether in ion beam implantation or plasma immersion (for example). The n-type dopant impurities introduced into the silicon are, for example, phosphorus atoms. In addition, a shading mask can be superimposed on the substrate during ion implantation, when uniform doping of the front face 12a is not desired. The dose D1 of atoms implanted in step F1 is advantageously between 5.1014 CM-2 and 2.5.1015 CM-2. This provides a region 14 with little interference with the absorption of photons and whose recombination rate is low. A region 15 may also be n-type doped on the rear face 12b of the substrate (or opposite the region 14) during the formation of the doped region 14, in particular during a POCI3 gas diffusion. This region 15 has no effect on the operation of the cell once the metallization on the rear face is performed. Prior to step F1, the substrate 12 may have undergone steps of preparation of its surface, in particular a step of cleaning its front face 12a and its rear face 12b, followed by a structuring step of its front face 12, for example in the form of pyramids. This structure aims to increase by diffraction the proportion of photons that penetrate the substrate. These preparation steps being conventional, they are not described in detail here. In step F2 of FIG. 3B, a new doping step, by ion implantation, is performed through a shading mask 30. At least one overdoped region 14 ', adjacent to region 14, and two patterns alignment members 34 are defined during this step in the front face 12a of the substrate. The overdoped region 14 'and the alignment units 34 have a dopant concentration C2 greater than the concentration of C1 dopants in the region 14. For example, three overdoped regions 14' and two alignment targets 34, regions 14 'are shown in FIG. 3B. All are surrounded by the region 14 more weakly doped. The ions implanted during step F2 belong, in this first example of implementation, to the same type of conductivity as that of region 14 (type n). The regions 14 'thus form a so-called selective emitter, intended to be covered by the metallization tracks. When the front face 12a has been entirely doped in step F1 (FIG. 3A), the dose D2 of ions implanted in step F2 may be equal to, lower than or greater than the implantation dose D1 of step F1. The overdoped regions 14 'and the alignment units 34 are then formed within the layer 14 and have a dopant concentration corresponding to the sum of the doses D1 and D2. There is, in this case, no strong constraints for the placement of the shading mask 30 with respect to the substrate 12.
    [0021] An implantation dose D2 equal to the implantation dose D1 simplifies the process and improves its reproducibility. The same implantation equipment, configured with the same parameters, is used for steps F1 and F2. When, on the other hand, the highly doped regions 14 'are implanted outside the weakly doped region 14, that is to say in areas of the initial substrate 12 doped with the p type, the implantation dose D2 is then greater than D1 dose, so that we obtain a higher concentration of dopants. Two different shading masks (i.e. complementary) are then provided for the implantation steps F1 and F2.
    [0022] The steps F1 and F2 can be carried out in any order, since the dopant concentration C2 of the regions 14 'results either from the addition of the dopants of the step F1 and the dopants of the step F2. or a single implantation step F2 performed independently of step F1. The shading mask 30 is preferably located at a distance between 0 and 5 mm from the substrate 12 and positioned parallel thereto. It comprises a first set of openings 32a whose shapes and dimensions correspond to those of the regions 14 'and a second set of openings 32b corresponding to the alignment patterns 34. These openings are, for example, made by laser drilling. Preferably, the overdoped regions 14 'form on the surface of the substrate lines whose transverse dimension (the width I in the section plane of FIG. 3B) is between 250 μm and 300 μm for selective emitter silicon cells. The mask 30 is a removable shading mask and may be formed of various materials, in particular silicon, graphite or metal, optionally covered with a non-metallic protective film, for example resin or an amorphous dielectric material . It can also be a "stencil" mask like those used on screen printing equipment. FIG. 5A shows an example of a "composite" shading mask that can be used for both the ion implantation of step F1 and the ion implantation of step F2. This shading mask comprises two sets of identical patterns, to treat several substrates simultaneously. The patterns of the first series each comprise a single aperture 32c for the implantation of dopants over the entire surface of the substrate ("full plate"), during step F1 (dose D1). The patterns of the second series correspond to the apertures 32a and 32b of FIG. 3B, respectively to form the overdoped regions and the alignment patterns, during the implantation step F2 (dose D2). This mask is advantageously used for the manufacture of a batch comprising several photovoltaic cells, for the purpose of large-scale industrial production. A first group of cells is implanted using the first set of patterns, while a second group of cells is implanted with the second set of patterns. The patterns are then shifted one notch, horizontally or vertically, then the second implantation is performed with the other series of patterns for each group, without having to extract the substrates from the implantation chamber between the two ionic implantations.
    [0023] FIG. 3C represents a heat treatment step F3, on the one hand electrically activating the dopants of the regions 14, 14 ', patterns 34, and on the other hand, oxidizing the surface of the substrate 12. A layer Thus, an oxide layer 36b also covers the rear face 12b of the substrate. The semiconductor material here being silicon, the layers 36a and 36b are made of silicon oxide, for example SiO 2. Preferably, the thickness of the layers 36a and 36b is greater than 5 nm and less than 40 nm. The heat treatment advantageously comprises a first dopant activation phase at a temperature T1 and a second phase under a partial flow of oxygen at a temperature T2 making it possible to form the oxide layers 36a and 36b. By thus separating the two actions of the heat treatment, it is possible to choose different annealing conditions for these two actions and to optimize each one of them. The temperatures (T1, T2) and / or the annealing times may in particular be different. By way of example, the activation temperature T1 of the dopants is between 800 ° C. and 1100 ° C. and the oxidation temperature T2 is between 700 ° C. and 900 ° C. Alternatively, the heat treatment of step F3 may comprise a single annealing phase, in an atmosphere comprising oxygen, which performs both the activation of dopants and the growth of oxide layers 36a and 36b between them. two phases. The thickness of the silicon oxide layer formed on the front face 12a of the substrate depends of course on the conditions of the oxidizing annealing: the duration of the annealing, the temperature and the oxygen flow rate mainly. The dopant concentration of the oxidized material also influences the oxide thickness. Thus, under identical annealing conditions, the oxide is thicker as the concentration of dopants (all species combined) is high. It should also be noted that for a given dose and energy, the plasma immersion technique makes it possible to implant the dopants closer to the surface with respect to ion beam implantation, which makes it possible to grow an oxide. thicker.
    [0024] As the front face 12a has different concentrations of C1 and C2 dopants, the oxide layer 12a has a variable thickness. This is thicker above alignment patterns 34 and overdoped regions 14 ', as shown in FIG. 3C.
    [0025] FIG. 4 represents, in a first series of dashed lines, the reflectivity RE in the visible range (400-750 nm) of a silicon substrate whose surface has a conventional pyramidal texturing and covered with a single layer silicon oxide SiO2, for thicknesses of this layer ranging from 5 nm to 20 nm (in 5 nm increments). It is found that the thicker the SiO 2 oxide, the lower the RE reflectivity, ie the less the substrate reflects the incident light. This observation is also true regardless of the wavelength of the incident light. Consequently, a reflectivity contrast arises from the difference in thickness between the oxide 36a on the alignment units 34 and the regions 14 'on the one hand, and the oxide 36a on the layer 14 on the other hand. This contrast is defined by the following relation: C = RE1-RE2 RE1 + RE2 in which RE1 denotes the reflectivity of the alignment units 34 and RE2 denotes the reflectivity of the adjacent doped region 14. The dotted curves of FIG. . In fact, the reflectivity contrast due to a single oxide layer of variable thickness is very low, less than about 5%. It is for this reason that it is difficult to distinguish with the naked eye highly doped regions among the regions with less doping.
    [0026] To increase the optical contrast between the regions of the substrate corresponding to the alignment units 34 and the immediately adjacent region 14, an antireflection layer 18, for example made of SiN, is deposited on the oxide layer 36a during a step F4 ( Fig.3D). This antireflection layer 18 is commonly used in photovoltaic cells because it makes it possible to increase the number of photons absorbed by the cells (it reduces the reflectivity of the emitter 14). However, in addition to playing this role in the selective emitter cell 30, the inventors have noticed that this antireflection layer also had the effect of accentuating the RE1-RE2 reflectivity difference caused by a variable oxide thickness. In FIG. 4, a second series of solid lines shows the reflectivities for different oxide layer thicknesses (from 5 to 25 nm, in steps of 5 nm), each of which is now covered with a SiN antireflection layer of 75 nm thick. On the one hand, it can be seen that the difference between two curves is much greater when an SiN antireflection layer is superimposed on the SiO 2 oxide layer. Consequently, the visual contrast C is amplified thanks to the antireflection layer 18. On the other hand, the evolution of the reflectivity RE with the thickness of the oxide layer SiO 2, in the presence of the SiN layer, is reversed. compared to the previous situation (ie without the SiN layer): the thicker the SiO2 oxide, the higher the RE reflectivity, in other words the more the substrate reflects the incident light. For example, in the wavelength range 500-550 nm corresponding to the green color, the reflectivity contrast C is approximately 48% between a SiO 2 layer 5 nm thick and a layer of 10 nm thick, both being coated with a SiN antireflection layer 75 nm thick. The contrast C is 70% for oxide layers 5 nm and 15 nm thick, 37% between 10 nm and 15 nm thick and 58% between 10 nm and 20 nm.
    [0027] By performing various calculations of the optical contrast C, it can be demonstrated that a difference of at least 10 nm in thickness between two layers of SiO 2 makes it possible to achieve a particularly high reflectivity contrast (in the presence of the layer antireflection), greater than 50%. However, as previously described, the thickness of the oxide layer depends on the conditions of the oxidation annealing, but also on the dopant concentration. The conditions of the oxidation annealing at step F3 and the concentration of C2 dopants implanted in alignment units 34 at step F2 will therefore be chosen so as to obtain a thickness difference of at least 10 nm between the oxide portion 36a located above the alignment patterns 34 and the portion outside these patterns, for example above the lightly doped region 14 (Fig.3C). The alignment patterns 34 can thus be easily detected on the surface of the substrate, without resorting to complex imaging systems, such as infrared for example.
    [0028] The choice of the concentration of C2 dopants in the selective emitter 14 'and the alignment patterns 34 is therefore motivated by the need to obtain in these regions (in addition to a low resistivity to achieve a good ohmic contact) a thicker oxide layer, at least 10 nm, with respect to the region surrounding the alignment patterns (the n-doped region 14 or the p-doped substrate 12 when the patterns are implanted outside the layer 14). Preferably, the heat treatment comprises a single annealing phase carrying out dopant activation and thermal oxidation. The conditions of such an annealing to obtain the oxide layer 36a are as follows: the annealing is carried out in the presence of dry oxygen (mixture of oxygen and nitrogen in the gas phase) and its duration is less than 30 minutes; the annealing temperature is between 800 ° C. and 900 ° C., for example 850 ° C. the oxygen flow rate, during the oxidation phase, is between 10 and 50 liters per minute, the oxygen / nitrogen ratio being between 0.2 and 1. Alternatively, the heat treatment is carried out in a single annealing step under a humic atmosphere (ie comprising water vapor) between 700 ° C and 800 ° C for less than 1 hour.
    [0029] The implantation dose D2 during the step F2 is advantageously between 5E14 and 2.5E15 atoms / cm2, and preferably between 1E15 and 2.5E15 atoms / cm2. It is estimated that the resulting concentration of C2 atoms is between 1E20 and 1E22 atoms / cm3, at the surface of the 14 '/ 34 zones (about 25 nm deep). The choice of the concentration of Cl dopants in the lightly doped region 14 is, for its part, constrained by the need to limit the Auger type recombinations in the photovoltaic cell, since this region forms the major part of the emitter. When the doping Fl is carried out by gaseous diffusion, the concentration Cl at the surface (ie over the first 25 nm) is preferably 5E19 and 1E21 atoms / cm3 (it varies according to the position on the wafer, the diffusion parameters and depending on the type of dopant). When step Fl is carried out by ion implantation, the implanted dose D1 is advantageously between 5E14 and 2.5E15 at / cm2, and preferably between 1E1 and 2.5E15 atoms / cm2. More generally, it can be considered that a C2 / C1 ratio of the surface concentrations (ie in the first 25 nm) greater than or equal to 1.5 makes it possible to obtain the difference in oxide thickness of 10 nm ( at least) required to distinguish the alignment patterns 34. In determining the Cl concentration and / or heat treatment parameters, it may be taken into account that the oxide layer 36a above the region 14 should preferably have a thickness of at least 5 nm. This minimum oxide thickness ensures that the surface of the substrate in this region is sufficiently passivated. Indeed, in addition to the fact that the oxide layer 36a reveals the alignment units 34, it also acts as a passivation layer of the surface of the substrate 12. Under the annealing conditions and for the dose / concentration ranges C1 indicated. above, the oxide layer 36a has a thickness above the lightly doped region 14 greater than 5 nm. The antireflection layer 18 is formed of a material having an optical index greater than that of the oxide (greater than 1.5 in the case of SiO 2), for example SiN, SiON, TiO 2 or Al 2 O 3. Its thickness is of course optimized so that the regions 14 (regions not covered by the metal) absorb a maximum of photons. This thickness is preferably between 50 nm and 100 nm. Alternatively, the antireflection 38 may be formed of a composite layer of average index greater than that of the oxide, that is to say a stack of several layers whose total height does not exceed 150 nm, for example SiN / SiON (the SiON layer being directed towards the outside of the cell).
    [0030] Once the antireflection layer 18 has been deposited (FIG. 3D), the alignment patterns 34 appear clearly on the surface of the substrate. It is then possible to proceed to the step F5 for forming the electrodes, on the front face and on the rear face of the substrate.
    [0031] In a preferred embodiment shown in FIG. 3E, this step F5 is performed by screen printing, according to the stencil principle. Metallic tracks 16a are deposited on the antireflection layer 18, facing the overdoped regions 14 '(ie the selective emitter), by means of a screen-printing screen 40. This screen comprises openings 42a corresponding to the pattern of the electrode to be formed, for example long, narrow lines parallel to each other. The screen 40 is positioned above the substrate 12 so that the openings 42a are opposite regions 14 'of the substrate. This positioning of the screen 40 is achieved using the alignment patterns 34, made visible by the oxide layer 36a and the antireflection layer 18. The positioning can also be automated, thanks to a visual identification alignment patterns by means of a camera (the screen is automatically positioned after the camera has located the sights 34). Screen printing equipment is generally equipped with such a camera in the visible range.
    [0032] A screen printing paste is spread on the antireflection layer 18 through the screen 40 placed on the substrate, forming the metallization tracks 16a of FIG. 3E. The screen printing paste is a mixture preferably comprising metal microparticles, for example silver or aluminum, glass chips, an organic binder and a solvent. Then, in a subsequent step of the manufacturing process (not shown), the substrate is subjected to infrared annealing. During this step, the screen printing paste migrates through the thin layers of oxide 36a and antireflection 18, and makes contact with the overdoped regions 14 '.
    [0033] A metallization 16b is also performed on the rear face 12b of the substrate. For example, a second screen printing paste is deposited full plate on the previously formed oxide layer 36b. As for the metallization tracks 16a, the metallization 16b perfuses through the oxide layer. After infrared annealing, it forms the metal electrode in ohmic contact with the p-type substrate. In the case of selective emitter cells, the metallization tracks 16a (and therefore the corresponding apertures 42a) preferably have a width of less than 100 μm. The metal tracks 16a are even thinner than the overdoped lines 14 ', to counter the alignment uncertainties - the lines 14' being for example 250 μm wide. In addition, the largest dimension of the alignment patterns (and hence the corresponding apertures 42b) is less than 1 mm, and advantageously less than the width of the overdoped regions 14 '(<250-300 μm).
    [0034] As fine alignment patterns 34 ensure precise positioning of the screen 40 with respect to the substrate 12. It is thus possible to deposit metallization tracks 16a partially covering the overdoped areas 14 '. The metallization tracks 16a do not extend outside the overdoped areas 14 'and are, instead, centered above them.
    [0035] The alignment patterns 34 are preferably located in an area of the surface of the substrate beginning midway from the center of the wafer (in the case of a circular substrate) and stopping shortly before the outer edge of the wafer. This placement of the patterns 34 makes it possible to be more precise on the alignment of the screen-printing screen 40. Thus, it will be avoided to make the patterns 34 on the extreme edge of the wafer where the implantation doses and the thickness of the oxide are less well controlled. The formation of the upper electrode, i.e. on the emitter side, may comprise two successive screen printing steps (serigraphs known as "double print" and "dual print"). For example, a first step aims to form the metallization tracks 16a on the overdoped regions 14 'and a second stage aims to form transverse connection tracks, which electrically connect the tracks 16a. FIG. 5B represents an example of implantation mask 30 in this case of "double" screen printing. The mask 30 used may comprise, in addition to openings 32a (corresponding to the overdoped regions) and 32b (alignment patterns for aligning the first metallization step with a screen 40), an additional set of openings 32c to form additional patterns. . These additional patterns are intended, they, to receive metal pads serving in turn alignment patterns during the second metallization step. For this purpose, the screen 40 then contains additional openings corresponding to these metal pads. The metal pads are not in contact with the core of the substrate because the implanted regions 14 'are deep and thus they will not act as a parasitic recombinant center for photoresists.
    [0036] The method of manufacture described above in connection with a selective emitter cell is also suitable for the formation of an inter-digitted back contact cell. The method is implemented on the rear face of the substrate, rather than on the front face, and allows the formation of one or more overdoped regions of a conductivity type opposite to that of the slightly doped adjacent region.
    [0037] FIG. 6 represents a photovoltaic cell 60 of IBC type ("Interdigitated back contacts") obtained in a second example of implementation of the manufacturing method.
    [0038] Consider in this example a n-doped silicon substrate 12, for example phosphorus. A region 22 of the rear face 12b is first n + type doped, i.e. more strongly than the n-type substrate 12, forming the base of the cell (doping reinforced with phosphorus, for example). Preferably, the region 22 occupies the rear face 12b in its entirety and forms an n-doped layer at the surface of the substrate 12.
    [0039] Preferably, an n + type doped region 23 is also present on the front face 12a of the substrate 12. Generally less doped than the region 22 (but more than the substrate 12), the region 23 creates a repulsive field favorable to a lesser recombination of the carriers on the surface of the substrate, as well as the layer 22. The lateral flanks of the substrate can also be n + doped for the same reason.
    [0040] The n + doping of the regions 22 and 23 may be carried out for example by POCl3 diffusion (followed by removal of the phosphor glass) all around the substrate (including flanks), or by implantation of ionized phosphorus atoms or of phosphorus-hydrogen compound ions (PH +, PH2 + ...) on each side of the substrate (step F1).
    [0041] At least one overdoped region 24 and alignment units 34, all p-type doped (doping opposite that of the substrate 12, for example with ionized boron atoms or with boron-hydrogen or boron-fluorine compound ions ) are then formed by ion implantation, by means of a shading mask (step F2). The p-n junction is then formed and the overdoped region 24 forms the emitter of the IBC cell 60. The region 24 is preferably formed in the n-type doped layer 22. An overdoped region may therefore be, in the case of an IBC cell, a region of a first conductivity type formed within a region of a second type of opposite conductivity, so that the first type "against -balance "the second type. This overdoped region then accumulates the dopants of the first type and the dopants of the second type.
    [0042] In the exemplary IBC cell shown in sectional view in FIG. 6, two overdoped regions 24 are formed in the layer 22. Preferably, the width I of the emitter (regions 24) is between 500 μm and 2 mm. . The heat treatment of step F3 makes it possible to activate the n-type dopants of region 22 and the p-type dopants of region 24. At least part of this heat treatment is carried out under oxygen, to form on the rear face 12b an oxide layer 36b of variable thickness, with a difference of at least 10 nm between the oxide portion covering the patterns 34 and the oxide portion covering the lightly doped region 22. The annealing temperature of activation is preferably between 950 ° C and 1100 ° C to fully activate the boron atoms. By way of example, the heat treatment comprises a first plateau at 1050 ° C. for a time t1 of less than 30 minutes without oxygen, for activating the dopants, and a second thermal plateau, namely between 800 ° C. and 9M ° C. for a period of time. duration t2 less than 30 min under a stream of dry oxygen, ie between 700 ° C. and 800 ° C. (for example 720 ° C.) for a time t2 of less than 45 min under flow of oxygen and water vapor (l wet oxidation being faster than dry oxidation, it is done at lower temperature) to form layer 36b. The ranges of C1 / C2 dopant concentrations (or ion implantation doses D1 / D2) applicable to an IBC cell are substantially the same as those described for a selective emitter cell. Then, the oxide layer 36b is then covered with an antireflection layer 18 'to discriminate the two types of doped regions 22, 24 and the alignment patterns 34 (step F4). The antireflection layer 18 'is preferably formed of the same material as the layer 18 covering the front face 12a exposed to solar radiation, for example SiN. Finally, electrodes 26a and 26b are deposited on the SiN layer 18 ', respectively facing the doped regions 22 (n) and 24 (p) (step F5). These electrodes are deposited, preferably by screen printing, through a screen aligned with the substrate thanks to the patterns 34. By doing so, a single mask (ie a single implantation step) is used to delimit both the n regions and the p regions of an IBC cell. This greatly simplifies the manufacturing process of these cells, compared to conventional methods comprising two successive implantation steps, each being performed with a different mask.
    [0043] FIGS. 7A and 7B show another example of an IBC cell in bottom views (rear face), respectively before and after the deposition of the electrodes 26a-26b on the doped regions 22-24. The metal tracks of each electrode 26a, 26b generally have the shape of rectangles (like the periphery of the cell) and are interconnected. In addition, the tracks of the electrode 26a are interdigitated with those of the electrode 26b, so that the electrodes are nested one inside the other. Three discrete alignment targets 34 are distributed over the surface of the cell and formed at the same time as the overdoped region 24.
    [0044] The method for forming an IBC cell may comprise an optional cleaning step between the F2 implantation and the F3 heat treatment, in order to remove any surface contaminants and / or surface defects related to the implantation. This step is, for example, carried out by means of a standard cleaning of the "SC1" or "SC2" type.
    [0045] Many variations and modifications of the manufacturing method described above will be apparent to those skilled in the art. In particular, semiconductor materials other than silicon may serve as a basis for the manufacture of these photovoltaic cells. Substrates made of germanium (whose oxide is GeO or GeO 2) or silicon-germanium alloy can in particular be used. The types of doping can of course be reversed, considering for example an n-type substrate rather than a p-type substrate in the case of the selective emitter cell (p-type substrate rather than an n-type substrate in the case of the IBC cell).
    [0046] Finally, the manufacturing method according to the invention is not limited to chemical species of dopants in particular, boron and phosphorus mentioned above being given by way of example. Two dopants of the same type can be used together or independently of one another. For example, phosphorus and arsenic can be chosen to dope two distinct regions of the same type of conductivity (eg 14 'phosphorus and 14' arsenic). The implanted dopant ions can be compound ions, formed from known precursor gases such as PH3, AsH3, BF3 and B2H6, for example hydrogenated phosphorus ions (PH +, PH2 +, etc.) or fluorinated boron ions (BF2 +). .
    权利要求:
    Claims (13)
    [0001]
    REVENDICATIONS1. A method of producing a photovoltaic cell comprising the steps of: - providing a doped semiconductor substrate (12) of a first conductivity type; - forming (F1) in the substrate a first region (14, 22) doped, the first region having a first concentration (C1) of doping elements; forming (F2), by ion implantation of doping elements in the substrate, at least one set of alignment patterns (34), the largest dimension of which is less than one millimeter, and a second region (14 ', 24); ) adjacent to the first region (14, 22), having a second concentration (C2) of doping elements greater than the first concentration (C1); subjecting (F3) the substrate to a heat treatment, so as to activate the doping elements and to form an oxide layer (36a, 36b) at the surface of the substrate, over the alignment patterns (34), the first region (14, 22) and the second region (14 ', 24), the second concentration (C2) and the conditions of the heat treatment being chosen so that the oxide layer (36a) has a thickness above the alignment patterns (34) at least 10 nm greater than the thickness of the oxide layer outside the alignment patterns; depositing (F4) an antireflection layer (18, 18 ') on the oxide layer; and - depositing (F5), through a screen (40), an electrode (16a, 26b) on the antireflection layer, facing the second region (14 ', 24), the screen being positioned relative to the substrate (12) by means of alignment patterns (34).
    [0002]
    The method of claim 1, wherein the first concentration (C1) and the heat treatment conditions (F3) are selected so that the oxide layer (36a) has a thickness above the first region (14). , 22) of at least 5 nm.
    [0003]
    3. Method according to one of claims 1 and 2, wherein the first region (14, 22) is formed by ion implantation of a first dose (D1) of doping elements through an entire face of the substrate (12). .
    [0004]
    The method of claim 3, wherein the first dose (D1) is between
    [0005]
    5.1014 cm-2 and 2.5.1015 cm-2 and is implanted with an implantation energy of between 5 keV and 15 keV. 5. Method according to one of claims 3 and 4, wherein the alignment units (34) and the second region (14 ', 24) are formed by ion implantation of a second dose (D2) of doping elements. through said superimposed substrate face (12) of a mask (30), whereby the alignment patterns and the second region combine the first and second doses (D1, D2).
    [0006]
    6. The method of claim 5, wherein the second dose (D2) is between 5.1014 cm-2 and 2.5.1015 cm-2 and is implanted with an implantation energy of between 5 keV and 15 keV.
    [0007]
    7. Method according to one of claims 5 and 6, wherein: - the photovoltaic cell is a selective emitter photovoltaic cell; said face of the substrate (12) is a front face (12a) of the photovoltaic cell; the first region (14) is doped with a second type of conductivity opposite to the first type, so as to form a p-n junction; and - the alignment patterns (34) and the second region (14 ') are doped with the second conductivity type.
    [0008]
    8. The method of claim 7, wherein the heat treatment comprises a single annealing phase in a dry atmosphere comprising oxygen, at a temperature between 800 ° C and 900 ° C loses a duration of less than 30 min, or in a humid atmosphere comprising oxygen at a temperature between 700 ° C and 800 ° C for a period of less than one hour.
    [0009]
    9. Method according to one of claims 5 and 6, wherein: - the photovoltaic cell is a photovoltaic cell back contacts inter-digits (60); said face of the substrate (12) is a rear face (12b) of the photovoltaic cell; the first region (22) is doped with the first type of conductivity; and - the alignment patterns (34) and the second region (24) are doped with a second conductivity type opposite to the first type, so as to form a p-n junction.
    [0010]
    10. The method of claim 9, wherein the heat treatment comprises a first oxygen-free annealing phase at a temperature between 950 ° C and 1100 ° C for a period of less than 30 min and a second annealing phase, or in an atmosphere composition comprising oxygen at a temperature between 800 ° C and 900 ° C for a period of time greater than 30 minutes, or in a humid atmosphere comprising oxygen at a temperature of between 700 ° C and 800 ° C for less than 45 minutes.
    [0011]
    The method of any one of claims 1 to 10, wherein a third region (15, 23) having the same type of conductivity as the first region (14, 22) is formed in the substrate opposite the first region and at the same time as the first region.
    [0012]
    The method of claim 1 to 11, wherein the electrode is serigraphically deposited and has a plurality of metallization tracks (16a) distributed over the antireflection layer (18).
    [0013]
    13. The method of claim 12, wherein the mask (30) comprises a first set of openings (32a) corresponding to the second region (14 ', 24), a second set of openings (32b) corresponding to the patterns of alignment (34) and a third set of openings (32c) corresponding to additional patterns, said additional patterns being covered with metal pads during the screen-printing step and serving as alignment patterns in an additional step of serigraphy.
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    同族专利:
    公开号 | 公开日
    CN106133918B|2018-06-19|
    WO2015132532A1|2015-09-11|
    EP3114713B1|2018-02-07|
    US9893229B2|2018-02-13|
    FR3018391B1|2016-04-01|
    EP3114713A1|2017-01-11|
    KR20160130307A|2016-11-10|
    NO3114713T3|2018-07-07|
    CN106133918A|2016-11-16|
    US20170018677A1|2017-01-19|
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    法律状态:
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1451869A|FR3018391B1|2014-03-07|2014-03-07|METHOD FOR MAKING A SELECTIVE DOPING PHOTOVOLTAIC CELL|FR1451869A| FR3018391B1|2014-03-07|2014-03-07|METHOD FOR MAKING A SELECTIVE DOPING PHOTOVOLTAIC CELL|
    NO15713979A| NO3114713T3|2014-03-07|2015-03-05|
    KR1020167027777A| KR20160130307A|2014-03-07|2015-03-05|Method for creating a photovoltaic cell with selective doping|
    EP15713979.1A| EP3114713B1|2014-03-07|2015-03-05|Method for creating a photovoltaic cell with selective doping|
    CN201580016243.7A| CN106133918B|2014-03-07|2015-03-05|The method for manufacturing selective doping photovoltaic cell|
    US15/124,097| US9893229B2|2014-03-07|2015-03-05|Method for manufacturing a photovoltaic cell with selective doping|
    PCT/FR2015/050540| WO2015132532A1|2014-03-07|2015-03-05|Method for creating a photovoltaic cell with selective doping|
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